| 摘要 |
PURPOSE:To obtain the titled device enabling the stable vapor deposition of a highly insulating substance by plating a discharge electrode near a high frequency coil placed between a substrate on which vapor is deposited and an evaporating source confronting the substrate in a vacuum chamber and by further plating a discharge controlling means for the electrode. CONSTITUTION:A highly insulating material for vapor deposition such as SiO2 is evaporated from an evaporating source 5 in a vacuum chamber 9 and the resulting vapor is ionized in glow discharge caused by a high frequency coil 8. The ionized vapor is accelerated with an electric field, collided and deposited on a substrate 7 on which vapor is deposited. At this time, the vapor sticks to the coil 8 during passing through the coil 8 to make the glow discharge unstable. In order to prevent the trouble, a discharge electrode 1 is placed near the coil 8 and allowed to cause discharge to compensate defective flow discharge. Accordingly, the highly insulating substance can be uniformly and surely vapor-deposited on the substrate.
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