| 摘要 |
PURPOSE:To increase the degree of freedom of design of an isleted thin film semiconductor area by making a thin film semiconductor area consist of an isleted area crossing the gate wiring in the direction of width, making the source wiring connected to a part of the isleted area, and making the picture element electrode connected to a part of the isleted are through a drain electrode connected to a part of the isleted area through a drain electrode. CONSTITUTION:An FET is formed by connecting the source wiring 32 to correspond to X axis of a matrix and connecting the gate wiring to Y axis of the matrix in beltlike form and placing an isleted semiconductor area 35 at interesection of the two electrodes. A drain electrode 34 is connected to the isleted semiconductor area 35, and further connected to a picture element electrode 37, and a capacitor 36 connected in parallel to a liquid crystal element is formed at the back of the drain electrode 34. Here, the isleted thin film semiconductor area 35 is placed at a position crossing the gate wiring 33 in the direction of width. Thus, it becomes possible to design the area of the isleted thin film semiconductor area 35 freely along the direction of the gate wiring without giving influences on the opening area of the picture element electrode 37.
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