| 摘要 |
PURPOSE:To grow a crystal having high purity by splashing gaseous aluminum atoms continuously into a growing chamber without blowing the same to a substrate surface, thereby growing the crystal. CONSTITUTION:The gaseous aluminum atoms obtd. by heating aluminum to a high temp. are continuously splashed to the inside of the growing chamber without blowing the same to the substrate surface of grow the crystal. The reactive residual gas is removed in the form of a compd. by splashing the aluminum atoms to the inside of the growing chamber in the above-mentioned molecular beam epitaxy method, by which the clean ultra-high vacuum is obtd. and the crystal growth with high purity is executed.
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