| 摘要 |
PURPOSE:To obtain film having excellent reproducibility, high purity, high electrical conductivity and less alpha-rays source in the stage of performing titled vapor growth on a semiconductor substrate in a reaction tube by introducing a reactive etching gas to the high melting source region of the reaction tube. CONSTITUTION:A region A for processing a semiconductor substrate 23 and a region B for a high-melting metallic source are provided in a reaction tube 21. The substrated 23 are placed at a prescribed interval on a holder 22 at right angles to the longitudinal direction of the tube 21 in the region A. A ribbon-shaped filament 23 of a high melting metal, for example, Mo consisting of a high purity material is provided in the region B. The filament is heated to a prescribed temp. by the electric power supplied thereto from an external power source 25. A reactive etching gas such as HCl or the like is introduced into the tube 21 and at the same time H2 or H2 is introduced as a carrier gas into the tube through the other branch gas introducing port 27 in the case of performing vapor growth. The HCl etches the heated Mo filament 24 and the high melting metallic compd. of MoCl5 is formed with high purity and is decomposed in a vapor phase onto the substrated 23 heated by the heater 28 so that the Mo film is deposited on the substrated 23. |
