| 摘要 |
PURPOSE:To enable a mass production by forming the end face of a resonator of a semiconductor laser device, thereby confirming the oscillation of the state of a wafer. CONSTITUTION:An N type AlxGa1-xAs clad layer 2, an AlyGa1-yGa1-yAs active layer, a P type AlxGa1-xAs clad layer 4, and an N type GaAs layer 5 are continuously grown on an N type GaAs substrate 1 formed with two ridges. Then, Zn diffusion is performed in a striped state by photoetching to form a P<+> type layer, and a positive electrode 7 is formed at the P side. Thereafter, the hatched portion for forming a resonator is removed by etching. The shape of etching for an anisotropy of etching becomes a forward mesa type with an angle (e). Accordingly, the position of a photomask is determined so that the active layer becomes vertical to the end face at the end face. After etched so that the thickness of the wafer becomes the prescribed thickness, a corner electrode 6 is formed at the N side. Then, a semiconductor laser device having a light emitting region 9 can be obtained. |
