| 摘要 |
PURPOSE:To enable the reduction of series resistance components and to contrive the improvement in high speed operation by forming a photo-detecting part of an optical integrated circuit in which a PIN PD and a JFET are formed into one body, in a layer whose band gap is larger than that of InGaAs so as to make a dark current small and by arranging an N<+> layer as a bottom layer. CONSTITUTION:On a semi-insulating InP substrate 1, an InGaAsP layer 6 is epitaxially grown. Next, an SiO2 mask 7 is formed on a part of said substrate and an exposed substrate part as an etching part 8 is etched. After that, by a selective burying epitaxial growth of second time, an N InGaAsP layer 9, an N InGaAsP layer 10, and an N InGaAsP layer 11 are epitaxially grown in order, thereby making the etching part 8 flat. Then, the SiO2 mask 7 is removed and a separating groove 12 of an JFET is formed. By diffusing Zn, a P-type photo-detecting part 13 of a P-I-N PD and a P-type gate part 14 of the JFET are formed and an electrode 15 is formed. |
