发明名称 Semiconductor laser apparatus.
摘要 A semiconductor laser apparatus has a semiconductor laser diode (21) for radiating a laser beam (30a), a photodetector (23) formed on a semiconductor substrate (22), a prism (24) having a first plane (24a) for introducing the laser beam (30a), for example onto an optical disc, and for introducing a reflected laser beam (30r) from the optical disc onto the photodetector (23); and a second plane (24b) facing the photodetector (23), and a coating layer (27, 28) formed on the boundary between the semiconductor substrate (22) and the prism (24). The coating layer (27, 28) has a refractive index such that laser light (30s) incident from the first plane (24a) other than the reflected laser beam (30r) is inhibited from reaching the photodetector (23).
申请公布号 EP0243170(A2) 申请公布日期 1987.10.28
申请号 EP19870303534 申请日期 1987.04.22
申请人 SONY CORPORATION 发明人 YOSHITOSHI, YOU;MATSUMOTO, YOSHIYUKI
分类号 G02B1/10;G11B7/09;G11B7/135;H01L31/12;H01S5/022;H01S5/026 主分类号 G02B1/10
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