<p>A photoreceptor comprising a photoconductive layer composed of hydrogenated and/or fluorinated amorphous silicon, a surface modifying layer formed on the above photoconductive layer and composed of hydrogenated and/or fluorinated amorphous silicon carbide and a charge transport layer formed below the above photoconductive layer and composed of hydrogenated and/or fluorinated amorphous silicon carbide wherein the thickness "t" of the above surface modifying layer is selected in a range 400 ANGSTROM </=t<2,000 ANGSTROM .</p>
