| 摘要 |
PURPOSE:To increase the growing rate of a crystal and to reduce raw material and initial cost at the time of growing the single crystal by melting the raw material with a crucible, allowing the melt to flow down from the crucible to bring the melt into contact with a seed crystal, then detaching the crucible and the seed crystal in a vertical direction while relatively rotating the same. CONSTITUTION:The raw material polycrystal 4 is melted in the crucible 2 and the molten raw material is allowed to flow down from the crucible 2 so as to contact the seed crystal 8. While the seed crystal 8 is rotated relatively with the crucible 2, the seed crystal is lowered to grow the single crystal 5 on the seed crystal 8. The lumped granular polycrystal is usable as the raw material according to the above-mentioned growing method and therefore, the cost of the raw material is reduced and in addition, the single crystal having the desired specific resistance is produced by doping of O2 or selection of the raw material.
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