| 发明名称 |
MEANS FOR ALLEVIATING EMITTER CONTACT STRESS IN BIPOLAR TRANSISTORS |
| 摘要 |
An emitter contact structure is disclosed for alleviating forward bias beta degradation in a bipolar transistor. The structure comprises emitter contact metallurgy which travels over a dielectric insulating layer having an area of increased thickness adjacent to the area of contact between the metallurgy and the emitter. |
| 申请公布号 |
EP0166344(A3) |
申请公布日期 |
1987.10.28 |
| 申请号 |
EP19850107449 |
申请日期 |
1985.06.19 |
| 申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
HUECKEL, GARY ROBERT;PROKOP, GEORGE STEPHEN |
| 分类号 |
H01L29/73;H01L21/3205;H01L21/331;H01L23/485;H01L23/52;H01L29/417;H01L29/732;(IPC1-7):H01L29/52 |
主分类号 |
H01L29/73 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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