| 摘要 |
PURPOSE:To improve the sensitivity by providing a photosensitive transmission region between a phtosensitive region and a charge storage region so as to increase the number of elements capable of photoelectric conversion thereby improving the resolution and increasing the area capable of photodetection. CONSTITUTION:The photosensitive region 17 comprising photodetector element group consisting of photodiodes and the photosensitive transfer region 18 are alternately formed in the horizontal direction in the photosensitive section 10. In supplying a shift drive signal from a drive control circuit 16, the signal charge of the photosensitive transfer region 18 is transferred to the vertical CCD shift register 19 of the charge storage section 11, in which the signal electric charge is tentatively stored. A horizontal CCD register 13 is horizontally formed via a transfer gate 12 to the end of the section 11 and the output section of the horizontal CCD shift register 13 is connected to a changeover circuit 15 via a buffer amplifier 14. The changeover circuit 15 is turned on/off exclusively by using an inverter 22 connected between gate elements 20, 21.
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