发明名称 |
Method of producing silicon carbide |
摘要 |
In a method of producing silicon carbide by heating starting materials comprising siliceous material and carbonaceous material in a non-oxidizing atmosphere, those ingredients contained in gases evolved upon heating and solidified at a low temperature into impurities for silicon carbide are eliminated from the atmosphere during heating.
|
申请公布号 |
US4702900(A) |
申请公布日期 |
1987.10.27 |
申请号 |
US19860849281 |
申请日期 |
1986.04.08 |
申请人 |
BRIDGESTONE CORPORATION |
发明人 |
KURACHI, YASUO;ARAI, KATSUHIKO;WADA, HIROAKI;WATABE, YOJI;IRAKO, SANAE |
分类号 |
C01B31/36;(IPC1-7):C01B31/36 |
主分类号 |
C01B31/36 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|