| 摘要 |
<p>The present invention provides a method for growing GaAs single crystals in an apparatus comprising: a closed vessel containing therein a crucible charged with GaAs melt and adjacently located a GaAs single seed crystal, an As chamber charged with As and communicating, through a narrow passage, with said closed vessel to supply As vapor into said closed vessel, first heating means arranged around said closed vessel to heat said closed vessel, first temperature measuring means arranged in association with said GaAs melt to measure the temperature of said GaAs melt, a first temperature controller connected to said first temperature measurement means and said first heating means to keep said GaAs melt at a temperature set at or just above the melting point of GaAs, second heating means arranged around said As chamber to supply sufficient heat to said As chamber and narrow passage to prevent As vapor from deposition on the inside of said closed vessel, second temperature measuring means arranged in association with said As chamber to measure the temperature of the As in said As chamber, a second temperature controller connected to said second temperature measuring means and said second heating means to keep said As chamber at a substantially constant temperature sufficient to impart of a GaAs single crystal being grown on optimum As vapor pressure so as to cause said GaAs single crystal to be at least substantially devoid of deviation from the stoichiometric composition, the optimum As vapor pressure being provided with respect to GaAs melting point or GaAs melt temperature in accordance with the following formula: Popt ? 2.6 x 106 exp (-1.05eV/kT) ¢(Torr)! wherein k represents the Boltzmann constant, T represents the GaAs melting point or GaAs melt temperature, and Popt represents the optimum As vapor pressure, in Torrs, third heating means to heat the interior of said closed vessel in cooperation with said first heating means to prevent said As vapor from depositing on the inside of said closed vessel, first rotating and vertically moving means arranged to be brought into contact with supporting said closed vessel thereon to rotate said GaAs melt.</p> |
