| 摘要 |
PURPOSE:To simplify an electron beam lithographic process by incorporating a photochromic material in the resist layer for use in electron beam exposure formed on the substrate to be processed, subjecting a part of the resist layer to selective primary exposure, next to direct development, or to heat treatment followed by uniform secondary electron beam exposure and development, and thus forming a positive or reversal pattern with respect to the primary exposure pattern. CONSTITUTION:The surface of the substrate 12B made of glass or the like to be processed and having a light shading film is coated with the positive type electron beam (EB) resist layer 12 in an ordinary thickness. This layer 12 is exposed to electron beams EB having an energy intensity capable of reaching the bottom of the layer 12 in a prescribed pattern to form the primary exposed region 13A, that is, a color developed positive pattern 14. In the case of forming a positive pattern, this layer 12 is directly developed to selectively dissolve off the region 13A and form the positive pattern 15 corresponding to the exposure pattern. On the other hand, in the case of forming a reversal pattern, the positive resist layer 12 having the resist pattern 14 is heat developed to form a cross-linked color developed positive resist pattern 114, and the reversal pattern 114 is obtained by the secondary uniform EB exposure. |
