| 摘要 |
PURPOSE:To simplify the flattening of an interlayer insulating film by a method wherein an etching protection film is formed on a semiconductor substrate, and while one channel is being protected by the protection film, a contact hole is formed on the other channel. CONSTITUTION:An SiO2 film 33 is formed on the semiconductor substrate on which P-channel type and N-channel type MOSFETs are formed, and a BPSG film 34 is deposited on the film 33. Then, contact holes 35a and 35b are perforat ed on the films 33 and 34 located on N<+> type diffusion layers 32a and 32b, and Si layers 36a and 36b are formed in said holes 35a and 35b. Subsequently, an SiN film 37 is formed on the semiconductor substrate as an etching protec tion film, and the contact holes 38a and 38b, to be used for leading out of the source and drain of the P-channel type MOSFET, are perforated while the film 34 and the layers 36a and 36b are being protected by the film 37. Then, Si layers 39a and 39b are formed in the holes 38a and 38b. Subsequently, wirings 40a and 40b are formed on the layers 39a and 39b. As a result, the film 34 is not etched when the film 37 is removed, and the film 34 can be flattened. |
