| 摘要 |
A liquid phase epitaxy method for the manufacture of silicon layers containing semiconductor structures involving the epitaxial deposition of silicon using a melt of a metal as the solvent, the metal forming silicon saturated solutions below 900 DEG C., and not producing any doping in the layers corresponding to a concentration greater than 1017 doping atoms/cm3. A gold melt is preferred because the melting point of the gold-silicon eutectic is about 370 DEG C. The invention provides for implementing the liquid phase epitaxy at very low temperatures and, thus, producing single crystal silicon layers on substrates provided with insulation layers, and required for the manufacture of three-dimensional integrated circuits in microelectronics. |
