| 摘要 |
PURPOSE:To cut down the process of manufacture as well as to restore the crystal defect caused by impurities by a method wherein impurities are introduced into the channel forming region of an MISFET through an interlayer insulating film and a gate electrode before a data line is formed. CONSTITUTION:After an MISFET Qm has been formed, an interlayer insulating film 9 covering the FET Qm is formed. Then, a connection hole 10 is formed on the film 9 located on a semiconductor region 8. Subsequently, n-type impurities 11A are introduced into the region 8 through the hole 10. Then, p-type impurities 12A are introduced into the channel forming region of the FET Qm through the film 9, an electrode 5 and a film 4. subsequently, a heat treatment is performed, a stretching diffusion is performed on the impurities 11A and 12A respectively, an n<+> type semiconductor region is formed, and a p<+> type semiconductor region 12 is formed. To be more precise, as the impurities12 A to be introduced for writing-in of information are activated at a high heat- treatment temperature, the crystal defect generated on the part of a channel forming region can be restored by the introduction of said impurities. Also, as the information can be written-in after formation of the interlayer insulating film, the reduction in process of manufacture of the title device can be achieved. |
