| 摘要 |
PURPOSE:To reduce the area of a region and time required for detecting the position of a sample using electron beam projection, by performing the position alignment of a sample with respect to an electron beam lithography system, based on the position data of the sample, which is obtained by a position detecting system provided in front of and at the rear of the electron beam lithography system. CONSTITUTION:The relatively narrow region of the specified part of a sample 4 is scanned with an electron beam 5. when reflected electrons are generated, they are detected 9, and the positions of a pattern and the like are quickly detected. The projected position of the beam 5 is controlled based on the lightography data of the specified pattern stored in a control computer 8. The pattern and the like having a specified profile is scribed on the specified position of the sample 4 by the projection of the beam 5, so that the specified relative positional relation is obtained with respect to the pattern, which has been already formed. Then, the sample 4 is sequentially moved by specified distances in the specified directions with respect to the axes of an electron beam source 6 and an electronic control part 7. For every movement of the sample, the precise positioning by the scanning of the beam 5 on the relatively narrow region and the lithography of the specified pattern by the projection of the beam 5 are repeated. Thus the specified pattern is obtained on the entire surface of the sample 4.
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