| 摘要 |
PURPOSE:To obtain crystal substrates having a uniform thickness, by mounting the crystal substrates on the side surface part of a cylinder in a vapor growth apparatus, in which multilayer films comprising different compositions are grown on the crystal substrates, and providing a rotary body having thin-film-growing-gas stirring vanes in the device. CONSTITUTION:A cylinder 13, on which many substrates 11 are mounted, is attached to a part of a reacting tube 1 in parallel with the reacting tube 1. A rotary body 6 is provided in the cylinder 13, on which the substrates 11 are mounted. The rotary body 6 has vanes 7, by which reacting gas 8 is evenly attached to the substrate 11. The rotary body 6 is driven by a motor 5. The reacting tube is divided into the right and left parts. When the substrates are to be mounted, the tube is separated at a connecting part 12. when the mounting is finished, the two parts are connected and fixed. A substrate baking heater 10 is attached to the outer surface of the left part of the reacting tube from the connecting part 12. The gas 8 is evenly attached to the substrates and diffused by the rotating vanes 7. The gas is reacted and a solid phase material is formed. As the gas 8, different gas is supplied at a different time. Thus the thin films having different compositions can be sequentially formed, and many substrates can be manufactured one time.
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