| 摘要 |
<p>PURPOSE:To easily and effectively write with a simple constitution by amplifying data written in a static (S) memory cell through an FET controlled by a column selection signal by a sense amplifier controlled by the FET and writing in a dynamic (D) memory. CONSTITUTION:When the corresponding FETs 7, 8 are turned on by the column selection signal CL, a data writing circuit 10 is connected and the data is written in the S memory 7. During a reading period, the FETs 7, 8 are turned off, a bit line pair BL and the inverse, of BL are precharged to have a reading state. During the reading period, when the FET 2 is turned on, the reading data of the memory 7 is amplified by the sense amplifier 1 and reading data is written in the D memory selected by a word line W. Thereby, the contents of the S memory are easily and effectively written in the D memory by a timing signal using the reading period of the S memory with the simple constitution.</p> |
