| 摘要 |
PURPOSE:To remove a positive type resist film effectively, by exposing the resist film in an oxygen gas atmosphere including ozone, and heating a substrate to a specified temperature or higher. CONSTITUTION:A treating chamber 1 comprising a vaccum container is provided with an inlet port 2 for oxygen gas including ozone and a gas exhaust port 3. In one wall surface of the chamber 1, a radiationray transmitting window 4 is provided. Infrared-ray lamps 5 provided with reflecting mirrors are arranged at the outside of the chamber 1. Infrared rays are emitted toward the back surface of a substrate 7 in the chamber 1 through the window 4. Heating temperature is controlled by a power source controller 6 for the infrared ray lamps. The oxygen gas including ozone is introduced into the chamber 1 through the port 2 at a specified flow rate from an ozonizer. With the substrate being exposed to an atmosphere including ozone, the substrate is heated with the irradiation from the infrared-ray lamp. Then, removal of a positive type resist film 9 is started, e.g., at about 370 deg.C of the substrate temperature. |
