发明名称 SEMICONDUCTOR MANUFACTURING APPARATUS
摘要 PURPOSE:To enhance plasma yielding efficiency, to improve cleaning effect and to make it possible to perform easy cleaning work at any time, by providing one of plasma yielding electrodes in a reaction container. CONSTITUTION:In cleaning a reaction container 2, the pressure in the container 2 is reduced, and specified etching gas (g) is supplied instead of reaction gas. At the same time, a high frequency voltage is applied to electrodes 8A and 8B from a high frequency generator 10. Thus, a high frequency electric field is generated in the container 2. Reaction product on the inner wall of the container is removed and cleaned by the etching action of the plasma of the gas (g), which is yielded by the high frequency electric field. Since the electrodes 8A and 8B are provided in a gas path in the container 2, the cleaning effect is enhanced. An outer reacting tube 3 and an inner reacting tube 4 are not required to be removed at every cleaning. It is not required to insert an electrode material 8 in the tubes 3 and 4. Thus the cleaning can be readily performed. With jigs being made to remain in the tubes 3 and 4, the tubes 3 and 4 can be cleaned at the same time.
申请公布号 JPS62245626(A) 申请公布日期 1987.10.26
申请号 JP19860088219 申请日期 1986.04.18
申请人 FURENDO TEC KENKYUSHO:KK 发明人 OTANI KOKICHI;MIYAMOTO SHUICHI
分类号 H01L21/205;H01L21/302;H01L21/3065;H01L21/31 主分类号 H01L21/205
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