| 摘要 |
PURPOSE:To form a highly accurate absorber pattern readily, by using electron beam resist prepared by electron beam lithography aud the like, forming a pattern comprising macromolecular resin, and thereafter performing ion implantation. CONSTITUTION:A supporting film 2 is formed on an Si substrate 1 by a plasma CVD method. Then, with a polyimide film as a resin layer, a macromolecular resin pattern 3 is formed by three-layer resist process. At this time, Ti is used for an intermediate layer, and PMMA is used for electron beam resist. Thus the macromolecular pattern 3 is obtained by F4 RIE (Reactive Ion Etching) and O2 RIE. Under the state the pattern 3 is formed on the film 2, Ne<+> ions are implanted as accelerating ions 4. Then, an accelerating potential is adjusted, and the Ne<+> ions are implanted in the Si substrate, passing through the film 2. The Ne<+> ions remain in the macromolecular resin at a part of the pattern 3. Finally, a polyimide film having a specified thickness is formed as a protecting film 5. The substrate 1 is etched from the back surface, and a supporting frame 1' is obtained. |
