| 摘要 |
PURPOSE:To make it possible to form an active layer having excellent standard deviation at a uniform threshold voltage value VTH, by overlapping two ion implanted gallium arsinide substrates, coating the substrates with insulating films, performing high temperature annealing, thereby preventing As disappearance without the flowing of AsH3 gas. CONSTITUTION:Two ion-implanted gallium arsenide GaAs wafers 1 are overlapped so that ion implanted surfaces 2 are contacted to each other. Insulating films 3 are evaporated on an A surface 11 and a B surface 12. Annealing is performed without the flowing of AsH3 gas, and an active layer 4 is formed. The insulating films 3 are etched away. By overlapping the inner sides of the ion implanted layers 2 in this way and by evaporating the insulating films 3, As disapperance can be prevented without the flowing of the AsH3 gas. The threshold voltage value VTH can be made uniform, and the standard deviation can be improved.
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