| 摘要 |
PURPOSE:To make it possible to implement high density in an SOI device, by using single crystal Si, which is embedded in an amorphous insulating film that is formed on an Si substrate, as a seed, implementing the single crystal of an Si thin film on the seed and on the amorphous insulating film, thereby forming a large-area SOI film on the entire surface of a wafer. CONSTITUTION:On an Si substrate 1, an Si nitride film 5 is formed. Resist 6 is formed thereon, and a stripe pattern is formed. With this pattern as a mask, D ions 7 are implanted, and a p<+> layer 8 is formed. Then proton is implanted 9, and annealing is performed at 400 deg.C. An n-type layer is formed beneath the pattern of the nitride film 5. Then, anodic oxidation is performed in hydrofluoric acid, and porous Si 11 is formed. The porous Si 11 undergoes thermal oxidation, and an Si single crystal 3 is embedded in the porous Si oxide film. Then, amorphous Si is deposited on the entire surface. With the single crystal Si 3 as a seed, a single crystal is implemented by a solid phase epitaxy. Thus an SOI structure is formed on the entire surface.
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