| 摘要 |
PURPOSE: To secure the notable negative differential resistance with high resonance tunneling current by a method wherein the bottom of a potential well held between potential barrier layers is positioned lower than the potential position of outer potential barriers. CONSTITUTION: An N type conductive emitter layer 1, an undoped potential barrier layer 2, an undoped potential well layer 3, another undoped potential barrier layer 4 and an N type conductive collector layer 5 are successively laminated on an N type substrate 20. In such a constitution, the bottom of potential well formed by the layer 3 shall be positioned lower than the potential in the layers 1 and 5. Through these procedures, a high resonance tunneling current can be generated in the low voltage region subject to low thermal current running over the potential barrier to secure notable negative differential resistance at room temperature.
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