| 摘要 |
PURPOSE:To omit a masking process, by providing a device for pushing a semiconductor substrate in a reacting chamber, and etching only the back surface of the substrate without applying a mask scuh as resist on the surface of the substrate. CONSTITUTION:In a transparent reacting chamber 1, a pair of electrodes 2 are arranged at the upper and lower positions. Semiconductor-substrate mounting devices 6 comprising three or more insulators are arranged on the peripheral part of the lower electrode at an equal interval. A semiconductor substrate 3 is mounted on the devices 6. Etching gas is introduced in the chamber 1. The gas in the chamber 1 is reduced with a pump. A high frequency voltage is applied to a pair of the electrodes 2. Then, glow discharge is generated, and plasma is yielded. Etching is performed by chemical reaction between a chemically active component, which is present in the low temperature plasma, and a layer to be machined at the back surface of the upward facing substrate 3. Therefore, only the back surface can be etched without applying a mask such as resist on the surface of the substrate.
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