| 摘要 |
PURPOSE:To shorten baking time by using a boat, in which at least one of wall surfaces constituting the side surfaces of a melt reservoir can be moved, and changing a surface area on baking and on cooling. CONSTITUTION:In containing InAs and GaAs as a growth melt 5 is housed under the state in which a movable side wall 12 in a growth boat is positioned at a position of 12A and the volume of a melt reservoir 6 is increased, and heated at 700 deg.C in an H2 air current and baked. An operating rod 4 is moved in the direction of 14 before cooling and the movable side wall 12 is positioned at a position of 12B, and the growth melt 5 is brought to a shape having height proper to epitaxial growth. An InP substrate 8 is inserted into a recessed section 7 for a slider 2 after cooling, the operating rod 4 is connected to the slider 2, a temperature is elevated up to 670 deg.C and the substrate is soaked, the operating rod 4 is slid in the direction of 10 under the state in which the temperature is lowered up to 650 deg.C, and the InP substrate 8 on the slider 4 is brought into contact with the growth melt 5 and growth is conducted.
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