| 摘要 |
PURPOSE:To detect the quantity of etching of a sample precisely by a method wherein a detecting body is positioned in an etching environment approximately the same as the sample, the etching of a second layer is detected by a detecting means, detecting signals are outputted each time and the number of the detecting signals is counted. CONSTITUTION:A detecting body 32 on a disk 28 is etched at an etching rate approximately the same as a sample 2 together with said sample 2 by ion beams 10. First layers 36 and second layers 38 in the detecting body 32 are etched alternately in the detecting body 32 at that time, and pulse-shaped detecting signals S are outputted from a detector 40 every time the second layers 38 are etched and counted in a counter 46. Since the spaces T2 of the second layers 38 are determined previously at that time, the number of said detecting signals S corresponds to the quantity of the detecting body 32 etched, the quantity of the sample 2 etched. Accordingly, the number of said detecting signals S is counted, thus accurately detecting the quantity of the sample 2 etched, the quantity of an etching layer 6 thereof etched in more concrete terms.
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