发明名称 VAPOR GROWTH DEVICE
摘要 PURPOSE:To promote the cooling of a semiconductor wafer after vapor growth, preventing the inflow of air into a scavenger, and to obviate oxidation by a reaction with oxygen in air by mounting a gas supply system capable of supplying an inert gas in the scavenger, through which the semiconductor wafer after vapor growth passes, and an exhaust regulating valve capable of adjusting the displacement of the scavenger. CONSTITUTION:Vapor growth is completed, a residual gas in a quartz reaction pipe 12 is evacuated, N2 gas is introduced through an on-off valve 16 from one part of a door 15 and the door 15 is opened, and an silicon wafer 13 after vapor growth is drawn out to a scavenger 14 from the quartz reaction pipe 12. The inside of the scavenger 14 is supplied with N2 gas from an N2 gas supply system 21 during a time when the silicon wafer 13 passes in the scavenger 14, an exhaust regulating valve 22 connected to the scavenger 14 is closed, and the inside of the scavenger 14 is filled previously with N2 gas. The silicon wafer 13 after vapor growth passing through the scavenger 14 is moved to a clean bench, and shifted to a wafer housing from a carrier boat in the clean bench.
申请公布号 JPS62244127(A) 申请公布日期 1987.10.24
申请号 JP19860088528 申请日期 1986.04.17
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 MATSUSHITA YOSHINARI;KARATSU KAZUHIRO
分类号 H01L21/205;H01L21/31 主分类号 H01L21/205
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