| 摘要 |
PURPOSE:To suppress the generation of the residual stress at the point of the time of forming a thin film by variably controlling DC or AC bias current to be applied to a substrate to be formed with the thin film. CONSTITUTION:A bias power source system consisting of a bias diaphragm setter 1, a controller 2 and a bias power source 3 is provided to an ion plating device, etc. The bias characteristic is set with the setter 1 and a signal is fed to the controller 2 to variably control the bias voltage to be impressed from the bias power source 3 to the substrate 5. For example, the low bias voltage is first impressed and is thereafter gradually increased. The metallic vapor generated from a vapor source 9 of this device is ionized in a high-frequency discharge region by a high-frequency coil 6. The ions are thereafter accelerated by the electric field applied by the bias power source 3 to form the prescribed thin film on the substrate 5. The generation of the residual stress in the stage of forming the thin film is relieved by the above-mentioned method without the need for a post treatment.
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