| 摘要 |
PURPOSE:To stably produce and deposit high hardness cubic boron nitride by irradiating excimer laser light on a gaseous starting material to decompose the starting material and by bringing the resulting excited boron and nitrogen atoms into a reaction on a heated substrate. CONSTITUTION:A reaction chamber 5 is evacuated and a gaseous starting material contg. boron and nitrogen atoms is introduced into the chamber 5 from a gas feeding system 3 through a gas feeding pipe 4. A substrate 8 is heated to about 300-2,000 deg.C with a heater 7 and then laser light is introduced into the chamber 5 from excimer laser device 1 through the window 2 to decompose the gaseous starting material. The resulting excited boron and nitrogen atoms are brought into a reaction on the substrate 8 to produce and deposit a cubic boron nitride film. By this method, high hardness boron nitride giving a high quality film of a uniform thickness can be synthesized.
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