| 摘要 |
PURPOSE:To obtain a film having uniform characteristics and a uniform thickness by sputtering by using a target for sputtering formed by growing a thick film of a high m.p. metal and/or an alloy thereof by a chemical vapor growth method. CONSTITUTION:A target for sputtering is formed by growing a thick film 2 of a high m.p. metal and/or an alloy thereof by a chemical vapor growth method on a backing plate 1 of a metal, carbon or the like. A metal belonging to the group IVa, Va or VIa of the periodic table, e.g., W, Mo or Cr is used as the high m.p. metal. |
