| 摘要 |
PURPOSE:To cut an element in a predetermined size and shape by a marker of an accurate size by forming the marker region of a semiconductor thin film together with a photovoltaic power generating region after laminating the thin film. CONSTITUTION:After a transparent conductive film 5, a semiconductor thin film 6, a metal electrode film 7 and a protective film 8 of predetermined shapes as required are sequentially laminated on a transparent insulating substrate 4, a marker 1 used as a reference in case of cutting it in predetermined size and shape is formed of the film 6 together with a photovoltaic power generating region. For example, a glass substrate 4 is covered with the film 5 made of ITO or SnO2, patterned in a predetermined shape, and an amorphous silicon film 6 having a P-I-N structure is formed thereon. When the silicon film is patterned by photoetching, the marker is simultaneously formed. Then, a metal electrode film 7 is formed by depositing aluminum using the mask thereon. Further it is covered with a protective film 8. |
