| 摘要 |
PURPOSE:To form an inexpensive transistor having preferably surge resistance by forming a one conductivity type diode layer to be superposed with a base region, and forming a Zener diode of the diode layer and an epitaxial layer. CONSTITUTION:At lease one conductivity type high impurity density semiconductor substrate 1, one conductivity type epitaxial layer 2 operating substantially as a collector formed on the substrate 1, a reverse conductivity type low impurity density base region 3 formed on the layer 2, a reverse conductivity type high impurity density base contact region 4 superposed at least on the end of the region 3, and a mesh emitter region 5 formed on the region 3 are provided. One conductivity type diode layer 7 to be superposed on the region 3 is formed in such a transistor to form a Zener diode with the layer 7 and the layer 2.
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