| 摘要 |
PURPOSE:To obtain a semiconductor memory device highly integrated in a simple process by forming a groove formed on a substrate and a capacitor electrode on the extension of the groove, forming a gate electrode on the sidewall of the electrode projected on the substrate, and forming an impurity region on the projection of the electrode. CONSTITUTION:A groove type capacitor is so formed as to bury a groove formed on a substrate 1 with a capacitor electrode and to simultaneously project out of the substrate 1 and form a step on the substrate 1. A switching transistor is formed by arranging a gate electrode on the sidewall of the step of the electrode and forming an impurity region 10 on the projection of the substrate 1 of the electrode. Charge is stored near the substrate of the electrode. Thus, the transistor is formed in the same polycrystalline Si on the capacitor, an area required for one cell is reduced as compared with the conventional one, and the integration of a D-RAM can be enhanced that much. Since the transistor can be formed in a self-aligning manner, a process can be simplified. |
