| 摘要 |
PURPOSE:To obtain a semiconductor device adapted for a high density by composing a field plate separating portion of a thin insulating film of the same degree as a gate insulating film, a silicon nitride film and an N-type polycrystalline silicon as a field plate electrode to form an active region and a field region in a self-aligning manner. CONSTITUTION:In a MIS field effect semiconductor integrated circuit formed on a semiconductor substrate 1 of one conductivity type, a channel stopper P<+> type diffused layer 4 is provided to separate the elements of at least N- channel element region, an entire element separating region is formed in contact with an active region, the configuration is formed of an insulating film of the thickness of the same degree as a gate insulating film 8, a silicon nitride film 5 and N-type polycrystalline silicons 6, 6', and an element separating method in which the silicons 6, 6' are the same potential as the semiconductor surface directly thereunder is used. For example, after the N-type polycrystalline silicon formed on the film 5 is selectively etched, it is thermally oxidized, a thick silicon oxide film 7 is grown on the silicons 6, 6' by thermal oxidizing, and then the film 5 of the portion to become an active region and a thin silicon oxide film 2 of the lower layer is removed by etching. |
