| 摘要 |
PURPOSE:To obtain an accurate capacity ratio without varying due to the irregularity of pattern etching electrodes by forming the electrode so that the area of a region which operates substantially as a capacity is formed of the electrode, and constructing it so that the area ratio of the electrodes and the ratio of peripheral lengths become like the value of capacity ratio. CONSTITUTION:A plurality of capacity elements each of which has a first region 6 formed on a semiconductor substrate, a dielectric film 10 covered on the surface and electrodes 9 formed thereon are formed, and a capacity ratio of provided in a circuit manner. In such a semiconductor integrated circuit device, it is formed so that the area of a region which operates substantially as a capacity is determined by the area of the electrodes 9, the area ratio of the electrodes 9 is set by the value of the capacity ratio, and the ratio of the periph eral lengths of the electrodes 9 is set to approx. capacity ratio. For example, the areas of regions SA1, SB1 of the second electrodes 9A, 9B which operate substantially as a capacity are so formed that the area ratio becomes 1:4, and a slit 11 is formed on the region SB1 to set the ratio of the peripheral lengths of the regions to approx. 1:4 to perform the capacity ratio 1:4. |
