| 摘要 |
PURPOSE:To operate an FET at an arbitrary operation point by forming the gate region of an initial stage FET of an amplifier as a common floating diffusion region of either one of source and drain of a reset FET and forming a control electrode through an insulating layer on a gate region. CONSTITUTION:An amplifier which inputs and amplifies a signal charge trans ferred from a charge transfer element 10 from the gate 22 of an initial stage FET 3 to output it, and a reset FET 2 for sweeping out the remaining charge on the region 22 of the FET 3 are provided. In the output device of such a charge transfer element, the region 22 of the FET 3 is used as a common float ing diffusion region of either one of source and drain of the FET 2. Further, a control electrode 34 is formed through an insulating layer 24 on the gate region, a voltage to be applied to the electrode 34 is selected to set the opera tion point of the FET 3. The FET 3 is, for example, composed of a P<+> type region 30, an N-type region 22 and a p-type substrate 1.
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