| 摘要 |
PURPOSE:To uniformly form a large diameter wafer in an excellent reproducible manner by a method wherein a semiconductor crystal thin film is formed on the seed part of a semiconductor substrate and the insulator arranged on the circumference of said seed part, the seed part adjoining to the thin film is brought into the state of insulator, and an electrically independent semiconductor layer is obtained. CONSTITUTION:A photoresist film 4 is formed on the surface of a single crystal Si substrate 1, the surface of the film 4 is exposed by selectively performing an etching, and a seed part 11 is formed by conducting a plasma etching using the film 4 as a mask. After the film 4 has been removed, an SiO2 film 2 is formed on the surface of the substrate 1 excluding the seed part 11, and the surface thereof is flattened. Also, a single crystal element region 6 is grown using the exposed seed part 11 as a seed, and an oxide film is formed on the surface of the region 6 by performing a thermal oxidization. Then, oxygen atoms reach the single crystal of the seed part 11 passing through the SiO2 film 2, the substrate 1 is oxidized, the region 6 is separated from the substrate 1, and an electrically independent semiconductor layer is formed.
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