| 摘要 |
PURPOSE:To easily design the layout of a semiconductor integrated circuit device by forming a bypass capacitor between first and second nodes in an integral structure (MIM) that an upper conductor film (M) connected through an insulating film (I) with the second node in a lower conductor film (M) connected with the first node to reduce the unuseful chip area of a large scale integrated circuit. CONSTITUTION:After Si ions are implanted to a semiinsulating GaAs substrate 1 to form an N-type active layer, ohmic electrodes 44. 45 are formed of AuGe/Au and Schottky gate electrodes 32, 33 are formed of tungsten nitride. Si ions are implanted in high density to reduce the resistances of source, drain and cathode of Schottky diode to form an n<+> type layer 9. When MIM wirings 5 connected with the gate of next stage from the cathode side node of the Schottky diode D is formed in a laminated structure of an aluminum film 51 of lower conductor film, SiO2 film 52 of insulating film and aluminum film 53 of upper conductor film, the wirings 5 form a bypass capacitor CF as they are. Thereafter, an interlayer insulating film 81 is deposited, a hole is opened in the film 81, alumi num wirings 6 are further deposited with an interlayer insulating film 82, a necessary hole is opened, aluminum wirings 7 are formed to complete the device.
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