发明名称 SEMICONDUCTOR MEMORY DEVICE
摘要 PURPOSE:To reduce area loss and to improve reliability by providing a row read line and a column read line corresponding one by one to a spare bit line. CONSTITUTION:The spare bit line 3 corresponds one by one to a spare row information read line 13 and a spare column information read line 14, both the spare row information read line 13 and a row information read line 6 having information selected by a selector 1 by using a row selection signal 4 from a substantial bit line 2 are inputted to a row parity generation circuit 11 to generate the row parity. A switch circuit of the spare bit line to replace the bit line is controlled at an address generating a row selection signal selecting the substantial bit line to be replaced. Thus, the provision of lots of fuses is not required between the spare bit line and row/column selection signals, the loss of the chip area is less and high reliability is obtained.
申请公布号 JPS62243200(A) 申请公布日期 1987.10.23
申请号 JP19860086814 申请日期 1986.04.15
申请人 NEC CORP 发明人 YOSHIDA MASAAKI
分类号 G11C29/00;G06F12/16;G11C29/42 主分类号 G11C29/00
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