| 摘要 |
The invention relates to a semiconductor device encompassing a distributed mixer/amplifier circuit, this circuit consisting of several field-effect transistors each comprising two main terminals termed source and drain and two main control terminals termed source and drain and two control terminals termed first and second gate, these field-effect transistors being mounted in such a way that their first and second gates are connected to inductances to form transmission lines termed first and second gate lines, that their drains are connected to inductances to form a transmission line termed the drain line, and that their sources are earthed, the distribution of the field-effect transistors along the gate and drain lines being such that these lines are periodically charged by their own impedance and by the gate and drain capacitances of the transistors thus constituting so-called <<artificial>> lines and such that an alternating input signal is applied to the input of each of the gate lines and an amplified alternating signal is tapped off from reception of television broadcasts relayed by artificial satellites and broadband integrated mixer amplifier circuits. Application: integrated mixer amplifier circuits for the reception of television broadcasts relayed by artificial satellites and broadband integrated mixer amplifier circuits. <IMAGE>
|
