| 摘要 |
PURPOSE:To reduce an NF in high frequency by forming a pad electrode on a contacting electrode in a passivation film opening window on a substrate, and reducing source. drain or gate electrode forming area smaller than the pad electrode. CONSTITUTION:A gate electrode 2 is formed on a gallium arsenide 1, an SiO2 film 4 and a plasma nitride film 5 is formed as a passivation, and a pad electrode 3 is then formed. In this case, the size of the electrode 2 can be reduced to 10mum of the minimum diameter, and a parasitic capacity can be reduced to 1/50 of a conventional structure.
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