| 摘要 |
PURPOSE:To readily miniaturize an N<+> type layer and a P<-> type layer in a semiconductor device by allowing a second polycrystalline silicon film to remain only on one sidewall of a second insulating film and partial exposed surface of an epitaxial layer, and simultaneously diffusing reverse conductivity type impurity to a semiconductor substrate in the first polycrystalline silicon film and first and second impurity ions in second polycrystalline silicon film in the epitaxial layer to bond them. CONSTITUTION:After a silicon oxide film 2 is etched to expose a predetermined region of an epitaxial layer 1, deposited silicon nitride film 4, a first polycrystalline silicon film 3 and part of the layer 1 directly thereunder are etched, a high temperature oxide film 5 is formed, a second polycrystalline silicon film 6 which contains high density N-type impurity and low density P-type impurity is formed on the exposed sidewall and the part of the exposed surface of the layer 1, the portion of the left sidewall is removed, high density boron in the film 3, high density boron in the second polycrystalline silicon film and low density boron are simultaneously diffused in the layer 1 to simulta neously form a P<+> type layer 9, an N<-> type layer 7 and a P<-> type layer 8.
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