| 摘要 |
PURPOSE:To improve the yield of manufacturing a semiconductor device by providing the same as or similar thermal expansion coefficient to that of an interlayer insulating film in a wiring electrode film to reduce a stress generated in case of passing heat treating step or after passing it, thereby preventing the wiring electrode film from being disconnected. CONSTITUTION:After an aluminum film which contains as impurities 0.8-0.9% of copper, 1% of magnesium, 2-2.5% of nickel, l4% of silicon and 1% of iron is formed as a lower layer wiring electrode film 4, a Pl-SiN film is grown as an interlayer insulating film 3. Thereafter, an aluminum film having the same composition as the film 4 is formed as an upper layer wiring film 2, and a device is formed through a normal semiconductor manufacturing process.
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