| 摘要 |
PURPOSE:To obtain a semiconductor device in which an injector low current region operates stably at high speed by providing an I<2>L element in an N-type epitaxial layer of specific resistance and thickness of a semiconductor substrate surface layer, and providing a specific phosphorus density N-type diffused region in the N-type epitaxial layer uppermost portion except the base region of a lateral P-N-P transistor in the I<2>L element. CONSTITUTION:After a buried N-type diffused region 2 is formed on a P-type silicon substrate 1, a phosphorus is diffused as an impurity in surface density up to approx. 10<18>cm<-3> in a portion except the base region of an I<2>LP-N-P transistor to form an N-type buried region 12. Then, after an N-type epitaxial layer 3 is grown with 0.6-1.0cm of specific resistance and 3.6-4.4mum of thick ness, phosphorus is implanted by an ion implanting method on a portion except the base region of the transistor to form an N-type diffused region 11 of 5X10<18>-1.5X10<19>cm<-3> of phosphorus density. Thus, a high speed I<2>L gate is obtained, and the power consumption of the semiconductor integrated circuit can be reduced. |
