| 摘要 |
PURPOSE:To avoid development of crackings in a chip and make contact resistance created when the chip is fixed to an external equipment small enough by a method wherein the back surface of a semiconductor wafer is subjected to a grinding process by a grinder equipped with an abradant of a specific diameter and grooves which are deeper than the specific dimension are formed on the back-surface of the wafer. CONSTITUTION:The thickness of a semiconductor wafer 11 is about 600 mum and active devices are formed on its surface. This wafer 11 is put on a fixed table 31 upside down. The fixed table 31 is moved parallel to the direction X and a grinder 32 is rotated to subject the back-surface of the wafer 11 to a grinding process. At that time, the grinder 32 equipped with an abradant of a diameter between 30 mum and 40 mum is employed. Thus the thickness of the wafer 11 is controlled to be the required value (for instance 200 mum). In the figure, a reference numeral 20 denotes a ground surface and a reference numeral 21 denotes a broken down layer created in the ground surface 20. With this grinding process, the ground surface with V-shape grooves whose depths (t) are deeper than 0.5 mum can be obtained.
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