| 摘要 |
PURPOSE:To avoid conductor discontinuity and enhance reliability such as electromigration resistance by a method wherein, after a contact hole is formed, a semiconductor thin film or a thin film containing metal is formed on the side surface of the contact hole and then the contact hole is selectively filled with metal. CONSTITUTION:After a high concentration diffused layer 2 is formed in a semi conductor Si substrate 1, an insulating film 3 is formed and a contact hole 4 is drilled in the insulating film 3 to expose the diffused layer 2. Then a 2nd insulating film 5 of thin thickness is deposited over the whole surface and succes sively a thin polycrystalline Si film 6 is formed. The polycrystalline silicon film 6 on the bottom surface of the contact hole 4 and on the flat planes of the 1st and 2nd insulating films is removed. The 2nd insulating film on the bottom surface of the contact hole 4 is etched to expose the diffused layer 2. Gas composed of WF6 diluted by Ar is made to react with the polycrystalline Si film 6 and the Si diffused layer 2 to deposit a W film 7. Then WF6 is made to react with gas containing H2 and W 7 is made to grow by utilizing hydrogen reduction reaction.
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