发明名称 APPARATUS FOR MAKING SINGLE CRYSTAL
摘要 PURPOSE:The crucible containing polycrystal melt is provided with a feed path which has a through-hole passing to the inside of the crucible on the outside and the feedstock is fed from the path and the through-hole to enable miniaturization of apparatus for single crystal production and yield increase based on the feedstock. CONSTITUTION:In the oven 1, the quartz crucible 2 supported with graphite susceptor 3 is placed in the insulation material 7 and heated with heaters 6 to melt polycrystal silicon. The crystal seed 10 is hung with the wire 8 and pulled up from the polycrystal melt 11 to allow the silicon single crystal 11A to grow. In this apparatus, a path 14 for feeding the feedstock from the vertical duct 13 through the hole 12 into the crucible is formed along the outer surface of the crucible 2. As the single crystal 11A is pulled up, a needed amount of silicon granules is fed from the duct 18, annular receiver 15, through nozzle 16, the path 14 and the hole 12 into the crucible 2.
申请公布号 JPS62241889(A) 申请公布日期 1987.10.22
申请号 JP19860084680 申请日期 1986.04.12
申请人 MITSUBISHI METAL CORP 发明人 SAHIRA TATEAKI;KIDA MICHIO
分类号 C30B15/02;C30B15/10;C30B29/06;H01L21/18;H01L21/208 主分类号 C30B15/02
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